类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 11.4A (Ta), 90A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10.5mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 110µA |
栅极电荷 (qg) (max) @ vgs: | 53 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3900 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 156W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8-1 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS4852NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16A/155A 5DFN |
|
NTD5867NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
|
FQPF19N20CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 19A TO220F |
|
NTD24N06L-1GRochester Electronics |
MOSFET N-CH 60V 24A IPAK |
|
IPW60R190P6Rochester Electronics |
MOSFET N-CH 600V 20.2A TO247 |
|
SPB80N06S2L-11Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3 |
|
IRFP3006PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO247AC |
|
IRFR430BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSC0908NSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB70N08TMRochester Electronics |
MOSFET N-CH 80V 70A D2PAK |
|
AOB240LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 20A/105A TO263 |
|
IRLR2703TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 23A DPAK |
|
ZXMP6A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 3A SOT223 |