类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 8.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 950mOhm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 58 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1.37 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 36W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTB23N03RGRochester Electronics |
MOSFET N-CH 25V 23A D2PAK |
|
SI7101DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 35A PPAK 1212-8 |
|
SPA11N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220-3 |
|
AUIRFS8405Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
AOB25S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 25A TO263 |
|
AOT254LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 4.2A/32A TO220 |
|
AUIRLR2908TRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
NTE2396ANTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 33A TO220 |
|
IPD90R1K2C3ATMA2IR (Infineon Technologies) |
MOSFET N-CH 900V 2.1A TO252-3 |
|
IRF740PBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 10A TO220AB |
|
FDAF62N28Rochester Electronics |
MOSFET N-CH 280V 36A TO3PF |
|
STP9NM60NSTMicroelectronics |
MOSFET N-CH 600V 6.5A TO220AB |
|
FQB17N08TMRochester Electronics |
MOSFET N-CH 80V 16.5A D2PAK |