English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 320mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 75 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 700mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-92 |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB11N52K3STMicroelectronics |
MOSFET N-CH 525V 10A D2PAK |
|
NTMFS4923NET1GRochester Electronics |
MOSFET N-CH 30V 12.7A/91A 5DFN |
|
STD40P8F6AGSTMicroelectronics |
MOSFET P-CH 80V DPAK |
|
STP28NM60NDSTMicroelectronics |
MOSFET N-CH 600V 23A TO220 |
|
SUD50P04-08-GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252 |
|
IPU039N03LGXKIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
|
IRFZ48VSPBFRochester Electronics |
MOSFET N-CH 60V 72A D2PAK |
|
MCH3476-TL-WRochester Electronics |
MOSFET N-CH 20V 2A SC70FL/MCPH3 |
|
STL17N65M5STMicroelectronics |
MOSFET N-CH 650V 1.8A POWERFLAT |
|
IXFN106N20Wickmann / Littelfuse |
MOSFET N-CH 200V 106A SOT-227B |
|
FQL50N40Rochester Electronics |
MOSFET N-CH 400V 50A TO264-3 |
|
IXFL38N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 29A I5PAK |
|
SSS1N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
