类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 15.9A (Ta), 54.7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 7.5V, 10V |
rds on (max) @ id, vgs: | 8.9mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1295 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 4.8W (Ta), 57W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8S |
包/箱: | PowerPAK® 1212-8S |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB65R125C7ATMA1Rochester Electronics |
PFET, 18A I(D), 650V, 0.125OHM, |
|
IXTN90P20PWickmann / Littelfuse |
MOSFET P-CH 200V 90A SOT227B |
|
FDD8896Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17A/94A TO252AA |
|
BUK7Y153-100EXNexperia |
MOSFET N-CH 100V 9.4A LFPAK56 |
|
IPD60R1K5PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.6A TO252 |
|
2N7000-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 200MA TO92-3 |
|
BUK7528-55A,127Rochester Electronics |
PFET, 42A I(D), 55V, 0.028OHM, 1 |
|
NVMFS5A140PLZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 20A/140A 5DFN |
|
PMDPB70XPERochester Electronics |
NOW NEXPERIA PMDPB70XPE - SMALL |
|
SCT3017ALHRC11ROHM Semiconductor |
SICFET N-CH 650V 118A TO247N |
|
STP200NF04STMicroelectronics |
MOSFET N-CH 40V 120A TO220AB |
|
DMN3008SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 17.6A PWRDI3333 |
|
FQD10N20CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.8A DPAK |