English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FRFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.5Ohm @ 3.13A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1255 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 48W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STF35N65M5STMicroelectronics |
MOSFET N-CH 650V 27A TO220FP |
|
IPB80P04P4L08ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
DMT10H010LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 11.5A/29.5A 8SO |
|
MCH6424-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMTH10H009SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
|
CSD18510KTTTTexas Instruments |
MOSFET N-CH 40V 274A DDPAK |
|
FDD6670AL_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RE1L002SNMGTLROHM Semiconductor |
MOSFET N-CH 60V 250MA EMT3F |
|
DMP32D4SW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 250MA SOT323 |
|
NVMFS5C410NWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/300A 5DFN |
|
STB18N60DM2STMicroelectronics |
MOSFET N-CH 600V 12A D2PAK |
|
BSP92PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 260MA SOT223-4 |
|
STD60N55F3STMicroelectronics |
MOSFET N-CH 55V 80A DPAK |
