English
简体中文
MOSFET N-CH 25V 100A 8VSON
MOSFET N-CH 400V 6A TO220-3
RF DIODE SCHOTTKY 75MW 0201
COPPER PATCH CORD, CAT 6, YELLOW
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 400 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 625 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 73W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM80N400CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 12A ITO220S |
|
IRF7468TRPBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
TK10A60W5,S5VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220SIS |
|
IXTH34N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 34A TO247 |
|
PSMN1R1-30EL,127Nexperia |
MOSFET N-CH 30V 120A I2PAK |
|
NVD5C460NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 18A/73A DPAK |
|
IXTA34N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 34A TO263AA |
|
TK8A55DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 7.5A TO220SIS |
|
SISA24DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK1212-8 |
|
IPB065N03LGATMA1Rochester Electronics |
MOSFET N-CH 30V 50A D2PAK |
|
IRF7834TRPBFRochester Electronics |
MOSFET N-CH 30V 19A 8SO |
|
NTD80N02-001Rochester Electronics |
MOSFET N-CH 24V 80A IPAK |
|
FDD5N50TMRochester Electronics |
4A, 500V, 1.4OHM, N-CHANNEL POWE |