类型 | 描述 |
---|---|
系列: | E |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 600mOhm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 680 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 78W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252AA |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HUF76609D3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SFR9014TFRochester Electronics |
MOSFET P-CH 60V 5.3A DPAK |
|
IXTA08N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 800MA TO263 |
|
FDD8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/40A TO252AA |
|
FDMS0308ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24A/49A 8PQFN |
|
SSM3J356R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 2A SOT-23F |
|
SK8603150LPanasonic |
MOSFET N-CH 30V 26A/89A 8HSO |
|
FDPF7N50U-GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F |
|
FDME910PZTRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
TT8U2TCRROHM Semiconductor |
MOSFET P-CH 20V 2.4A 8TSST |
|
SQ2310ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A TO236 |
|
DMP32D4S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 300MA SOT23 |
|
STP77N6F6STMicroelectronics |
MOSFET N-CH 60V 77A TO220 |