English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.3V, 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 128 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 8260 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDD60N360U1T4GRochester Electronics |
MOSFET N-CH 600V 11A DPAK |
|
RTL020P02TRROHM Semiconductor |
MOSFET P-CH 20V 2A TUMT6 |
|
AOD6N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5.3A TO252 |
|
FDS6680ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.5A 8SOIC |
|
IRF7456TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A 8SO |
|
FQA10N80CRochester Electronics |
MOSFET N-CH 800V 10A TO3P |
|
UPA2790GR-E2-ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
IXTQ50N20PWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO3P |
|
TP65H035WSQATransphorm |
GANFET N-CH 650V 47.2A TO247-3 |
|
NTR0202PLT1Rochester Electronics |
MOSFET P-CH 20V 400MA SOT23-3 |
|
SPP03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSP125H6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
DMN10H170SFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.9A 6UDFN |
