English
简体中文
MOSFET N-CH 100V 2.9A 6UDFN
1/4 HEX X 7/16 LENGTH
OSC XO 300MHZ 2.5V LVDS
SYSTEM BASIS CHIP FS8500
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 160mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.7 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1167 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 660mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 (Type E) |
| 包/箱: | 6-PowerUDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9E04-30B,127Rochester Electronics |
PFET, 75A I(D), 30V, 0.0044OHM, |
|
SQJA80EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
IPB123N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 58A D2PAK |
|
R6012ANJTLROHM Semiconductor |
MOSFET N-CH 600V 12A LPTS |
|
FDPF7N50Rochester Electronics |
MOSFET N-CH 500V 7A TO220F |
|
FQAF90N08Rochester Electronics |
MOSFET N-CH 80V 56A TO3PF |
|
NTD5806NT4GRochester Electronics |
MOSFET N-CH 40V 33A DPAK |
|
BUZ73AHXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHP18N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO220AB |
|
SIHB12N60ET1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO263 |
|
SIDR668DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 23.2A/95A PPAK |
|
IMW120R140M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 19A TO247-3 |
|
RSJ301N10FRATLROHM Semiconductor |
MOSFET N-CH 100V 30A LPTS |