类型 | 描述 |
---|---|
系列: | DTMOSIV |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 9.7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 430mOhm @ 4.9A, 10V |
vgs(th) (最大值) @ id: | 3.7V @ 500µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 700 pF @ 300 V |
场效应管特征: | - |
功耗(最大值): | 80W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN5R3-25MLDXRochester Electronics |
PSMN5R3-25MLD - N-CHANNEL 25V, L |
|
HUF76121S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHG33N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO247AC |
|
BSS138-13-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V SOT23 T&R 10K |
|
PMN52XP115Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM3J372R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 6A SOT23F |
|
IXFH220N06T3Wickmann / Littelfuse |
MOSFET N-CH 60V 220A TO247 |
|
DMS2220LFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.5A 6-DFN |
|
FCH47N60F-F133Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO247-3 |
|
IPW50R140CPFKSA1Rochester Electronics |
MOSFET N-CH 550V 23A TO247-3 |
|
IRFF9213Rochester Electronics |
MOSFET N-CH 150V 1.3A TO205AF |
|
AOB190A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO263 |
|
IRFU9024PBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A TO251AA |