English
简体中文
XTAL OSC VCXO 148.5000MHZ LVDS
GANFET N-CH 100V 25A DIE OUTLINE
LED LAMP T-3 1/4 BAYONET 60V MIN
IC FLASH 256MBIT PARALLEL 64TBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 7mOhm @ 25A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 5mA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 5 V |
| vgs (最大值): | +6V, -5V |
| 输入电容 (ciss) (max) @ vds: | 950 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | -40°C ~ 125°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Die Outline (11-Solder Bar) |
| 包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NP22N055SLE-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 22A TO252 |
|
BUK9635-100A,118NXP Semiconductors |
MOSFET N-CH 100V 41A D2PAK |
|
IRFSL4228PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 83A TO262 |
|
AO4407AL_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
|
IXTH200N075TWickmann / Littelfuse |
MOSFET N-CH 75V 200A TO247 |
|
FQPF10N60C_F105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9.5A TO220F |
|
IRFBF30SVishay / Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
|
AON4407LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 9A 8DFN |
|
STD85N3LH5STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
NTD32N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A DPAK |
|
AON6450LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8DFN |
|
IPP35CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 27A TO220-3 |
|
AOT5N50_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5A TO220-3 |