English
简体中文
RES 191K OHM 1/4W 1% AXIAL
MOSFET N-CH 40V 75A LFPAK56
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 36.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2040 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 105W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFH75N10QWickmann / Littelfuse |
MOSFET N-CH 100V 75A TO247AD |
|
IPI030N10N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO262-3 |
|
SI5435BDC-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.3A 1206-8 |
|
IRL540NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A D2PAK |
|
AON6413_101Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 22A/32A 8DFN |
|
SI4890DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
|
IRF7707TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 7A 8TSSOP |
|
NTMFS4C56NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 69A 5DFN |
|
TSM2NB65CH X0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 650V 2A TO251 |
|
IRFBC30LVishay / Siliconix |
MOSFET N-CH 600V 3.6A I2PAK |
|
IPP147N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 20A TO220-3 |
|
NTD20N03L27Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A DPAK |
|
2SK3068(TE24L,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 12A TO220SM |