English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.9mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 80µA |
| 栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2530 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR3711ZIR (Infineon Technologies) |
MOSFET N-CH 20V 93A DPAK |
|
STD8NM60NDSTMicroelectronics |
MOSFET N-CH 600V 7A DPAK |
|
IRL3705NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 89A TO262 |
|
SI7790DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8 |
|
SPD04N50C3BTMA1IR (Infineon Technologies) |
MOSFET N-CH 560V 4.5A TO252-3 |
|
IRFS9N60ATRLVishay / Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
|
IRFP140NIR (Infineon Technologies) |
MOSFET N-CH 100V 33A TO247AC |
|
IRFS4610PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 73A D2PAK |
|
BSC032N03SGIR (Infineon Technologies) |
MOSFET N-CH 30V 23A/100A TDSON |
|
IRL5602STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 24A D2PAK |
|
ZVP4525GTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 250V 265MA SOT223 |
|
IRFR3303TRLIR (Infineon Technologies) |
MOSFET N-CH 30V 33A DPAK |
|
IRFR3706CPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 75A DPAK |
