English
简体中文
CAP CER 560PF 16V C0G/NP0 1812
TVS DIODE 24V 51V DO214AB
MOSFET P-CH 30V 18.5A 8SOIC
RESISTOR CHASSIS MOUNT 931 OHM 1
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.8mOhm @ 18.5A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5020 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7821TRPBF-1IR (Infineon Technologies) |
MOSFET N-CH 30V 13.6A 8SO |
|
IRF7701IR (Infineon Technologies) |
MOSFET P-CH 12V 10A 8TSSOP |
|
IPB100N04S2L03ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A TO263-3 |
|
IRL2910LIR (Infineon Technologies) |
MOSFET N-CH 100V 55A TO262 |
|
IRFR3303CPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 33A DPAK |
|
FA57SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 57A SOT-227 |
|
AOK5N100LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO247 |
|
SPP100N06S2-05IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
NTB25P06GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
IRF510SVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
AOI2210Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 200V 3A/18A TO251A |
|
BSP171PE6327TIR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
NTD23N03RSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 3.8A/17.1A DPAK |