MOSFET P-CH 12V 10A 8TSSOP
IC SRAM 18MBIT PARALLEL 165CABGA
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 11mOhm @ 10A, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 5050 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-TSSOP |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB100N04S2L03ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A TO263-3 |
|
IRL2910LIR (Infineon Technologies) |
MOSFET N-CH 100V 55A TO262 |
|
IRFR3303CPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 33A DPAK |
|
FA57SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 57A SOT-227 |
|
AOK5N100LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO247 |
|
SPP100N06S2-05IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
NTB25P06GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
IRF510SVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
AOI2210Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 200V 3A/18A TO251A |
|
BSP171PE6327TIR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
NTD23N03RSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 3.8A/17.1A DPAK |
|
ZVP1320FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 35MA SOT23-3 |
|
NTMFS4701NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.7A 5DFN |