English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 22mOhm @ 8.2A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2300 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR3707ZPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 56A DPAK |
|
FDC636PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.8A SUPERSOT6 |
|
IRLR3303PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |
|
NTD6600N-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A IPAK |
|
RJK6013DPP-E0#T2Renesas Electronics America |
MOSFET N-CH 600V 11A TO220FP |
|
SI1419DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 300MA SC70-6 |
|
SI3805DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.3A 6TSOP |
|
IRFR024NTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
|
IRF6678TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 30A DIRECTFET |
|
BSC889N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A 44A TDSON |
|
BS108ZL1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 250MA TO92-3 |
|
SI4404DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 15A 8SO |
|
IXFK90N20Wickmann / Littelfuse |
MOSFET N-CH 200V 90A TO264AA |
