English
简体中文
RES 6.8K OHM 1% 1/4W 1206
MOSFET N-CH 30V TO252
CONN RCPT FMALE 12P SILVER CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Ta), 37A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 16mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1150 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.5W (Ta), 40.8W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPC8026(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 13A 8SOP |
|
NTB75N06LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
IRFHM7194TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.3A/34A 8PQFN |
|
IRF3707ZCSTRRIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
IRL3103STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A D2PAK |
|
IXTA76N075TWickmann / Littelfuse |
MOSFET N-CH 75V 76A TO263 |
|
IRF7421D1IR (Infineon Technologies) |
MOSFET N-CH 30V 5.8A 8SO |
|
STV240N75F3STMicroelectronics |
MOSFET N-CH 75V 240A 10POWERSO |
|
FQP47P06_NW82049Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 47A TO220-3 |
|
IRF9392TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.8A 8SO |
|
IRF2807SIR (Infineon Technologies) |
MOSFET N-CH 75V 82A D2PAK |
|
TPC8113(TE12L,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 11A 8SOP |
|
SPI80N03S2-03IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO262-3 |