类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | TO-263 (IXTA) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NP80N06PLG-E1B-AYRenesas Electronics America |
MOSFET N-CH 60V 80A TO263 |
|
RP1L055SNTRROHM Semiconductor |
MOSFET N-CH 60V 5.5A MPT6 |
|
SPP80N06S2L-05IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
|
IPP90R1K0C3XKIR (Infineon Technologies) |
MOSFET N-CH 900V 5.7A TO220-3 |
|
IRF6655TR1IR (Infineon Technologies) |
MOSFET N-CH 100V 4.2A DIRECTFET |
|
IRF5803D2PBFIR (Infineon Technologies) |
MOSFET P-CH 40V 3.4A 8SO |
|
2SJ377(TE16R1,NQ)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 5A PW-MOLD |
|
IRFBC30ASTRLVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
SI4880DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 13A 8-SOIC |
|
IRFBF20Vishay / Siliconix |
MOSFET N-CH 900V 1.7A TO220AB |
|
IRF3704ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 67A TO220AB |
|
IRFZ48RVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
GA100JT12-227GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |