English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET®, StrongIRFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.3mOhm @ 48A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 90 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3199 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40.5W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB Full-Pak |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI034NE7N3 GIR (Infineon Technologies) |
MOSFET N-CH 75V 100A TO262-3 |
|
IRFPS43N50KVishay / Siliconix |
MOSFET N-CH 500V 47A SUPER247 |
|
IRFS614B_FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 2.8A TO220F |
|
APL1001JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 18A ISOTOP |
|
NTMFS4921NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.8A/58.5A 5DFN |
|
AOD3C60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 3A TO252 |
|
STS26N3LLH6STMicroelectronics |
MOSFET N-CH 30V 26A 8SO |
|
IRF7410GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 12V 16A 8SO |
|
IRF7326D2IR (Infineon Technologies) |
MOSFET P-CH 30V 3.6A 8SO |
|
SI4860DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A 8SO |
|
IRL630STRRVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |
|
IRFP470Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO247AD |
|
NVTFS5811NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A 8WDFN |
