类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 77A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 14mOhm @ 72A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3700 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 217W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFH150N17TWickmann / Littelfuse |
MOSFET N-CH 175V 150A TO247AD |
|
BUK7207-30B,118Nexperia |
MOSFET N-CH 30V 75A DPAK |
|
IPI80P04P407AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO262-3 |
|
FQD3P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 2.4A DPAK |
|
IRF3707ZSTRLIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
BSS83PL6327HTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 330MA SOT23-3 |
|
IRFBC40AVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
AON6970_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH DFN |
|
IRFZ46NSTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 53A D2PAK |
|
FQI34P10TUSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 33.5A I2PAK |
|
GA04JT17-247GeneSiC Semiconductor |
TRANS SJT 1700V 4A TO247AB |
|
ZVP2120ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 120MA E-LINE |
|
IPD06P003NATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 22A TO252-3 |