English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchHV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 175 V |
| 电流 - 连续漏极 (id) @ 25°c: | 150A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 12mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 155 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 9800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 830W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AD (IXFH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7207-30B,118Nexperia |
MOSFET N-CH 30V 75A DPAK |
|
IPI80P04P407AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO262-3 |
|
FQD3P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 2.4A DPAK |
|
IRF3707ZSTRLIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
BSS83PL6327HTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 330MA SOT23-3 |
|
IRFBC40AVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
AON6970_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH DFN |
|
IRFZ46NSTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 53A D2PAK |
|
FQI34P10TUSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 33.5A I2PAK |
|
GA04JT17-247GeneSiC Semiconductor |
TRANS SJT 1700V 4A TO247AB |
|
ZVP2120ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 120MA E-LINE |
|
IPD06P003NATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 22A TO252-3 |
|
IRFHM8235TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 16A 8PQFN |
