English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 77A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.8V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2410 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 88W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTH180N085TWickmann / Littelfuse |
MOSFET N-CH 85V 180A TO247 |
|
SUD42N03-3M9P-GE3Vishay / Siliconix |
MOSFET N-CH 30V 42A TO252 |
|
IPD03N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
|
2SK3547G0LPanasonic |
MOSFET N-CH 50V 100MA SSSMINI3 |
|
FQP2N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 1.8A TO220-3 |
|
STP40NS15STMicroelectronics |
MOSFET N-CH 150V 40A TO220AB |
|
IPD144N06NGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-3 |
|
IXFH15N80QWickmann / Littelfuse |
MOSFET N-CH 800V 15A TO247AD |
|
APT80SM120SMicrosemi |
SICFET N-CH 1200V 80A D3PAK |
|
AON6450L_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8DFN |
|
AOTF7T60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO220-3F |
|
SI3481DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 4A 6TSOP |
|
IRF7822TRRVishay / Siliconix |
MOSFET N-CH 30V 18A 8SO |
