类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 9.5mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 16 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1300 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 6.5W (Ta), 39.5W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRFU4105PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 27A IPAK |
![]() |
IRL3103LPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A TO262 |
![]() |
NTB6448ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK |
![]() |
SPB07N60S5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO263-3 |
![]() |
STW55NM60NDSTMicroelectronics |
MOSFET N-CH 600V 51A TO247-3 |
![]() |
SI7888DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9.4A PPAK SO-8 |
![]() |
IRFR3706TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 75A DPAK |
![]() |
RFG60P05ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 60A TO247-3 |
![]() |
PHP176NQ04T,127NXP Semiconductors |
MOSFET N-CH 40V 75A TO220AB |
![]() |
APT5F100KMicrosemi |
MOSFET N-CH 1000V 5A TO220 |
![]() |
IRL3705ZLIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO262 |
![]() |
IXTH182N055TWickmann / Littelfuse |
MOSFET N-CH 55V 182A TO247 |
![]() |
IRF7456TRPBF-1IR (Infineon Technologies) |
MOSFET N-CH 20V 16A 8SO |