RES 169K OHM 1% 1/16W 0603
RES 73.2K OHM 0.1% 1/2W 1210
CAP THIN FILM 2.6PF 25V 0402
MOSFET P-CH 20V 4.3A MICRO8
类型 | 描述 |
---|---|
系列: | FETKY™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 4.3A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 55mOhm @ 4.3A, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 1066 pF @ 10 V |
场效应管特征: | Schottky Diode (Isolated) |
功耗(最大值): | 1.25W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | Micro8™ |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF6727MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A DIRECTFET |
|
IRFR18N15DTRLIR (Infineon Technologies) |
MOSFET N-CH 150V 18A DPAK |
|
IRFR4105ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A DPAK |
|
SUM36N20-54P-E3Vishay / Siliconix |
MOSFET N-CH 200V 36A TO263 |
|
IXFX32N50QWickmann / Littelfuse |
MOSFET N-CH 500V 32A PLUS247-3 |
|
NVD4813NHT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.6A/40A DPAK |
|
IRFS31N20DTRRPIR (Infineon Technologies) |
MOSFET N-CH 200V 31A D2PAK |
|
RJK4007DPP-M0#T2Renesas Electronics America |
MOSFET N-CH 400V 7.6A TO220FL |
|
IPP06CN10NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
|
PHB78NQ03LT,118NXP Semiconductors |
MOSFET N-CH 25V 40A D2PAK |
|
SUM110P08-11-E3Vishay / Siliconix |
MOSFET P-CH 80V 110A TO263 |
|
TPC8021-H(TE12LQ,MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 11A 8SOP |
|
FQAF12N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.8A TO3PF |