类型 | 描述 |
---|---|
系列: | SIPMOS® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 260mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.8V, 10V |
rds on (max) @ id, vgs: | 12Ohm @ 260mA, 10V |
vgs(th) (最大值) @ id: | 2V @ 130µA |
栅极电荷 (qg) (max) @ vgs: | 5.4 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 104 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.8W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-SOT223-4 |
包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7748DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
RDN120N25FU6ROHM Semiconductor |
MOSFET N-CH 250V 12A TO220FN |
|
DMG302PU-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 170MA SOT23-3 |
|
NTB65N02RT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 65A D2PAK |
|
SPP11N60CFDHKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220-3 |
|
SIA444DJT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SC70-6 |
|
AOT460_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 85A TO220 |
|
IPI26CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO262-3 |
|
IPD20N03LIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
IRFBE20SVishay / Siliconix |
MOSFET N-CH 800V 1.8A D2PAK |
|
IRFBC40LCSTRRVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
BSS816NW L6327IR (Infineon Technologies) |
MOSFET N-CH 20V 1.4A SOT323-3 |
|
IXFK60N55Q2Wickmann / Littelfuse |
MOSFET N-CH 550V 60A TO264AA |