类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Ta), 5.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 33mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.9 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 288 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 960mW (Ta), 1.7W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB80N06S2L-H5IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
MTD6P10ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6A DPAK |
|
FDI9406-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A I2PAK |
|
STF11N65K3STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
IRFPC50Vishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
STD22NF06AGSTMicroelectronics |
MOSFET N-CH 60V 23A DPAK |
|
PMZ270XN,315Nexperia |
MOSFET N-CH 20V 2.15A DFN1006-3 |
|
SPB160N04S2L03DTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
|
PMN50XP,165NXP Semiconductors |
MOSFET P-CH 20V 4.8A 6TSOP |
|
SUM09N20-270-E3Vishay / Siliconix |
MOSFET N-CH 200V 9A TO263 |
|
IPI08CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 95A TO262-3 |
|
STL70N10F3STMicroelectronics |
MOSFET N CH 100V 82A PWRFLAT 5X6 |
|
TSM4N70CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 3.5A TO252 |