类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 27A (Ta), 92A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3.4mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 72 nC @ 4.5 V |
vgs (最大值): | +20V, -12V |
输入电容 (ciss) (max) @ vds: | 6590 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 3.6W (Ta), 42W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DIRECTFET™ MT |
包/箱: | DirectFET™ Isometric MT |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM3K01T(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 3.2A TSM |
|
IRF6215LIR (Infineon Technologies) |
MOSFET P-CH 150V 13A TO262 |
|
AON7412Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 10A/16A 8DFN |
|
SI7860DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 11A PPAK SO-8 |
|
FQD4N50TM_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 2.6A DPAK |
|
DMTH10H030LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 28A TO252-4L |
|
MTP50P03HDLGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 50A TO220AB |
|
IRF7704TRIR (Infineon Technologies) |
MOSFET P-CH 40V 4.6A 8TSSOP |
|
SI4010DY-T1-GE3Vishay / Siliconix |
MOSFET N-CHANNEL 30V 31.3A 8SO |
|
ZVN2120ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 180MA E-LINE |
|
IRF830LVishay / Siliconix |
MOSFET N-CH 500V 4.5A I2PAK |
|
2SK2299NROHM Semiconductor |
MOSFET N-CH 450V 7A TO220FN |
|
IXTA110N12T2Wickmann / Littelfuse |
MOSFET N-CH 120V 110A TO263 |