English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 131A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.3mOhm @ 101A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5480 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL3714STRLIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
IRF2805LPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 135A TO262 |
|
BSS308PEL6327HTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 2A SOT23-3 |
|
NP55N055SDG-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 55A TO252 |
|
BSP296 E6433IR (Infineon Technologies) |
MOSFET N-CH 100V 1.1A SOT223-4 |
|
TSM120N10PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 100V 58A 8PDFN |
|
APT28F60BMicrosemi |
MOSFET N-CH 600V 30A TO247 |
|
SIB419DK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 9A PPAK SC75-6 |
|
IRLZ44ZSIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
|
NVMS4816NR2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.8A 8SOIC |
|
FDH633605Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH DO-35 |
|
NTD3055-094GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |
|
FQA12P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 12.6A TO3P |
