HEATSINK 35X35X15MM R-TAB
MOSFET N-CH 500V 17A TO220AB
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 350mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 89 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2210 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 280W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSO613SPVGHUMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 3.44A 8DSO |
|
IRF9510STRLVishay / Siliconix |
MOSFET P-CH 100V 4A D2PAK |
|
IXTP10N60PMWickmann / Littelfuse |
MOSFET N-CH 600V 5A TO220AB |
|
SSM3J120TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A UFM |
|
BTS113AE3045ANTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11.5A TO220AB |
|
IRFR010TRRVishay / Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
|
SPP80N04S2-04IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
SPN01N60C3IR (Infineon Technologies) |
MOSFET N-CH 650V 300MA SOT223-4 |
|
IPD60R450E6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9.2A TO252-3 |
|
IRFU2307ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A IPAK |
|
IXFR30N110PWickmann / Littelfuse |
MOSFET N-CH 1100V 16A ISOPLUS247 |
|
NTLUS3A39PZCTBGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.4A 6UDFN |
|
IRF3707ZSTRRPIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |