RES SMD 681 OHM 0.1% 3/8W 0603
CAP PTFE 12PF 2% 500V SMD
MOSFET P-CH 100V 4A D2PAK
CAP ALUM 10000UF 20% 63V SNAP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.2Ohm @ 2.4A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.7 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.7W (Ta), 43W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTP10N60PMWickmann / Littelfuse |
MOSFET N-CH 600V 5A TO220AB |
|
SSM3J120TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A UFM |
|
BTS113AE3045ANTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11.5A TO220AB |
|
IRFR010TRRVishay / Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
|
SPP80N04S2-04IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
SPN01N60C3IR (Infineon Technologies) |
MOSFET N-CH 650V 300MA SOT223-4 |
|
IPD60R450E6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9.2A TO252-3 |
|
IRFU2307ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A IPAK |
|
IXFR30N110PWickmann / Littelfuse |
MOSFET N-CH 1100V 16A ISOPLUS247 |
|
NTLUS3A39PZCTBGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.4A 6UDFN |
|
IRF3707ZSTRRPIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
NVMFS5C628NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
|
IRF540ZSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A D2PAK |