English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 235mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 92 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 4100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQA36P15_F109Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 36A TO3PN |
|
SI7448DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 13.4A PPAK SO-8 |
|
IRF7704IR (Infineon Technologies) |
MOSFET P-CH 40V 4.6A 8TSSOP |
|
PH3855L,115NXP Semiconductors |
MOSFET N-CH 55V 24A LFPAK56 |
|
APT11N80KC3GMicrosemi |
MOSFET N-CH 800V 11A TO220 |
|
STB70N10F4STMicroelectronics |
MOSFET N-CH 100V 65A D2PAK |
|
IRF3707IR (Infineon Technologies) |
MOSFET N-CH 30V 62A TO220AB |
|
SI6466ADQ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6.8A 8TSSOP |
|
TN2130K1-G-VAORoving Networks / Microchip Technology |
MOSFET N-CH 300V 85MA SOT23-3 |
|
NTB65N02RGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 65A D2PAK |
|
IPP65R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO220-3 |
|
RJK2557DPA-WS#J0Renesas Electronics America |
MOSFET N-CH 250V 17A 8WPAK |
|
SUD06N10-225L-E3Vishay / Siliconix |
MOSFET N-CH 100V 6.5A TO252 |
