English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 700mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.4Ohm @ 420mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 150 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT69M8LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHA 60V 10.2A POWERDI |
|
SI5404BDC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 5.4A 1206-8 |
|
IRFR13N15DTRRIR (Infineon Technologies) |
MOSFET N-CH 150V 14A DPAK |
|
FDN339AN_GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3A SUPERSOT3 |
|
IRF744Vishay / Siliconix |
MOSFET N-CH 450V 8.8A TO220AB |
|
HUFA76645P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 75A TO220-3 |
|
AUIRFR4105TRLIR (Infineon Technologies) |
MOSFET N-CH 55V 20A DPAK |
|
SPS03N60C3BKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO251-3 |
|
SI7476DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 15A PPAK SO-8 |
|
DMP3017SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 11.5A PWRDI3333 |
|
SUP75N03-04-E3Vishay / Siliconix |
MOSFET N-CH 30V 75A TO220AB |
|
TK12P60W,RVQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A DPAK |
|
IRLR8103TRIR (Infineon Technologies) |
MOSFET N-CH 30V 89A DPAK |
