English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M6 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 308mOhm @ 6.5A, 10V |
| vgs(th) (最大值) @ id: | 4.75V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16.8 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 650 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerFlat™ (5x6) HV |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0383DPA-09#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
NVHL080N120SC1ASanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 31A TO247-3 |
|
|
NVBLS4D0N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 19A/187A 8HPSOF |
|
|
MTV32N25ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IXTT96N20P-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 96A TO268 |
|
|
SQR97N06-6M3L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO252 |
|
|
RJK0364DPA-WS#J0Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
BTS247ZE3062AATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SIHU2N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.9A TO251AA |
|
|
FDR836PRochester Electronics |
P-CHANNEL MOSFET |
|
|
MSC015SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 140A TO247-4 |
|
|
2SK669KRochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
|
2SJ557(0)T1B-ATRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
