类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 96A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 24mOhm @ 48A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 145 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4800 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 600W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-268 |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQR97N06-6M3L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO252 |
|
RJK0364DPA-WS#J0Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
BTS247ZE3062AATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHU2N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.9A TO251AA |
|
FDR836PRochester Electronics |
P-CHANNEL MOSFET |
|
MSC015SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 140A TO247-4 |
|
2SK669KRochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
2SJ557(0)T1B-ATRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
IXTT140N075L2HVWickmann / Littelfuse |
MOSFET N-CH 75V 140A TO268HV |
|
2SK1318-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHD11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A TO252AA |
|
3SK222-T2-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQC40016E_DFFRVishay / Siliconix |
N-CHANNEL 40-V (D-S) MOSFET |