English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK03N4DPA-02#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
PMCXB900UEL147Rochester Electronics |
P-CHANNEL MOSFET |
|
|
JDX5012Rochester Electronics |
NFET T0220FP JPN |
|
|
MCQ4406A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 12A 8SOP |
|
|
DMPH6050SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI333 |
|
|
2SJ612-TD-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
IXFT15N100Q3-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 15A TO268 |
|
|
NP20P06YLG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 20A 8HSON |
|
|
RFM12P08Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
NVMJS0D8N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 56A/368A 8LFPAK |
|
|
NVTFS002N04CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/136A 8WDFN |
|
|
SIR872ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8 |
|
|
DMT32M5LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 30A POWERDI3333 |
