English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0358DSP-00#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
H7N1004FN-E-A9#B0FRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IRF645Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TK17A65W5,S5XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
|
2SK2070-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK3230B-T1-ARochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
|
SIB422EDK-T4-GE3Vishay / Siliconix |
MOSFET N-CH 20V 7.1A/9A PPAK |
|
|
NVMFS016N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A/33A 5DFN |
|
|
SQD50P03-07-T4_GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A TO252AA |
|
|
IRF612Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
R8007AND3FRATLROHM Semiconductor |
MOSFET N-CH 800V 7A TO252 |
|
|
NTTFS5CS73NLTWGRochester Electronics |
T6 60V NCH LL IN U8FL |
|
|
RJK03K0DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
