English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK3116(0)-Z-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
DMP31D7LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT323 |
|
|
6AM13Rochester Electronics |
N-CHANNEL AND P-CHANNEL, MOSFETS |
|
|
NTMFSC4D2N10MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 29.6A/116A 8DFN |
|
|
SIHH240N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A PPAK 8 X 8 |
|
|
RSY500N04FRATLROHM Semiconductor |
MOSFET N-CH 40V 50A TCPT3 |
|
|
BSB012N03LX3GXUMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK1284-Z-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IXFP4N100PMWickmann / Littelfuse |
MOSFET N-CH 1000V 2.1A TO220 |
|
|
SCT30N120D2STMicroelectronics |
SICFET N-CH 1200V 40A HIP247 |
|
|
FCMT080N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 38A 4TDFN |
|
|
TK28V65W,LQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
|
NTTFS5CS73NLTAGSanyo Semiconductor/ON Semiconductor |
T6 60V NCH LL IN U8FL |
