English
简体中文
SMALL SIGNAL BIPOLAR TRANSISTOR
P-CHANNEL MOSFET, DFN5060
JAM NUT RECEPTACLE
LASER DIODE 1530NM 2.511MW
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 40mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1050 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN5060 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
2N6767Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK3326(9)AZRochester Electronics |
DISCRETE / POWER MOSFET |
|
|
FS5ASJ-06F-T13#B00Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SPI07N60S5INRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
PX8244HDMG008XTMA1Rochester Electronics |
INFINEON PX8244HDM - QFN40 |
|
|
SGF25-TR-ERochester Electronics |
GAAS MOSFET AMPLIFIER |
|
|
DMP610DL-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V SOT23 T&R |
|
|
RFP4N40Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FDBL9403-F085T6Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/300A 8HPSOF |
|
|
UPA2811T1L-E1-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
UPA1559H(2)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVATS5A107PLZT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CHANNEL 40V 55A ATPAK |
|
|
NTD4404NRochester Electronics |
N-CHANNEL POWER MOSFET |