类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4V |
rds on (max) @ id, vgs: | 105mOhm @ 1A, 4V |
vgs(th) (最大值) @ id: | 1.3V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 280 pF @ 10 V |
场效应管特征: | Schottky Diode (Isolated) |
功耗(最大值): | 700mW (Ta) |
工作温度: | 125°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | WSMini6-F1-B |
包/箱: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RJK0358DPA-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3116(1)-ZK-E2-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMTS0D7N06CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 60.5A/464A 8DFNW |
|
FDW2515NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1852-T-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHB11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A D2PAK |
|
MMIX1F230N20TWickmann / Littelfuse |
MOSFET N-CH 200V 168A 24SMPD |
|
UPA2714GR-E1-ARochester Electronics |
P-CHANNEL SWITCHING POWER MOSFET |
|
ZXMN2F30FHQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.9A SOT23-3 |
|
DMN1017UCP3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 7.5A X3DSN1010-3 |
|
UPA2815T1S-E2-ATRenesas Electronics America |
MOSFET P-CH 30V 21A 8HWSON |
|
TK28V65W5,LQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
NTB110N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 30A D2PAK-3 |