English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/592 |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 34A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 81mOhm @ 34A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 125 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 4W (Ta), 150W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-254AA |
| 包/箱: | TO-254-3, TO-254AA (Straight Leads) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ES6U41FU7T2RROHM Semiconductor |
MOSFET/SCHOTTKY NCH SOT-563 |
|
|
NP84N075KUE-E2-AYRenesas Electronics America |
TRANSISTOR |
|
|
FDC3616NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 3.7A SUPERSOT6 |
|
|
CP375-CWDM3011N-WNCentral Semiconductor |
MOSFET N-CH 11A 30V BARE DIE |
|
|
ON5463,118Nexperia |
55V N CH TRENCHFET |
|
|
AOWF11A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO262F |
|
|
AUXYBFP3306IR (Infineon Technologies) |
MOSFET N-CH 60V TO-247AC |
|
|
ISP06P005NXTSA1IR (Infineon Technologies) |
SMALL SIGNAL MOSFETS |
|
|
RQK0609CQDQS#H1Renesas Electronics America |
MOSFET N-CH 60V 4A UPAK |
|
|
IXFD23N60Q-72Wickmann / Littelfuse |
MOSFET N-CHANNEL 600V DIE |
|
|
2SJ673-AZRenesas Electronics America |
MOSFET P-CH 60V 36A TO220 |
|
|
NTDV20N06LT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
|
|
2SK3377(0)-Z-E2-AZRenesas Electronics America |
TRANSISTOR |
