类型 | 描述 |
---|---|
系列: | * |
包裹: | Tray |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTM1630Wickmann / Littelfuse |
POWER MOSFET TO-3 |
|
APTML10UM09R004T1AGMicrosemi |
MOSFET N-CH 100V 154A SP1 |
|
JANTXV2N6796UMicrosemi |
MOSFET N-CH 100V 8A 18ULCC |
|
NP90N055MUK-S18-AYRenesas Electronics America |
MOSFET N-CH 55V 90A TO220-3 |
|
UPD70F3102AF1-33-FAA-ARenesas Electronics America |
MOSFET N-CH |
|
JANTX2N6901Microsemi |
MOSFET N-CH 100V 1.69A TO205AF |
|
AONR32320Alpha and Omega Semiconductor, Inc. |
MOSFET |
|
APTM120SK56T1GMicrosemi |
MOSFET N-CH 1200V 18A SP1 |
|
ISS06P010LXTSA1IR (Infineon Technologies) |
SMALL SIGNAL MOSFETS |
|
JANTXV2N6901Microsemi |
MOSFET N-CH 100V 1.69A TO205AF |
|
AUXFN8403TRIR (Infineon Technologies) |
MOSFET N-CH 40V 95A 8PQFN |
|
IPA60R125C6E8191XKSA1IR (Infineon Technologies) |
MOSFET N-CH TO220-3 |
|
64-2128IR (Infineon Technologies) |
MOSFET N-CH 100V 180A D2PAK |