类型 | 描述 |
---|---|
系列: | POWER MOS IV® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 28A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 200mOhm @ 14A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 210 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 3500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 360W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247AD |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOTF11S60_900Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO220 |
|
R6535ENZC8ROHM Semiconductor |
MOSFET N-CH 650V 35A TO3 |
|
CTLDM8002A-M621H BKCentral Semiconductor |
MOSFET P-CH 50V 280MA TLM621H |
|
V30431-T1-GE3Vishay / Siliconix |
MOSFET N-CH SMD |
|
IRF7738L2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 35A DIRECTFET |
|
UPA2793GR(0)-E2-AYRenesas Electronics America |
TRANSISTOR |
|
64-4112PBFIR (Infineon Technologies) |
IC MOSFET |
|
SIB437EDKT-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 9A PPAK TSC75-6 |
|
AOI518_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/46A |
|
CC1202Roving Networks / Microchip Technology |
MOSFET N-CH 800V 13A TO247 |
|
IXFX20N80QWickmann / Littelfuse |
MOSFET N-CH 800V 20A PLUS247-3 |
|
TPCC8136.LQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 9.4A 8TSON |
|
JANTXV2N6798UMicrosemi |
MOSFET N-CH 200V 5.5A 18ULCC |