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| 类型 | 描述 |
|---|---|
| 系列: | BIMOSFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 3000 V |
| 电流 - 集电极 (ic) (max): | 34 A |
| 电流 - 集电极脉冲 (icm): | 88 A |
| vce(on) (max) @ vge, ic: | 2.8V @ 15V, 10A |
| 功率 - 最大值: | 180 W |
| 开关能量: | - |
| 输入类型: | Standard |
| 栅极电荷: | 46 nC |
| td（开/关）@ 25°c: | 36ns/100ns |
| 测试条件: | 960V, 10A, 10Ohm, 15V |
| 反向恢复时间 (trr): | 1.6 µs |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | TO-263 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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