English
简体中文
RES SMD 200 OHM 0.5% 1/4W 1206
IGBT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HB |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | Trench Field Stop |
| 电压 - 集电极发射极击穿（最大值）: | 650 V |
| 电流 - 集电极 (ic) (max): | 80 A |
| 电流 - 集电极脉冲 (icm): | 160 A |
| vce(on) (max) @ vge, ic: | 2V @ 15V, 40A |
| 功率 - 最大值: | 283 W |
| 开关能量: | 498µJ (on), 363µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 210 nC |
| td（开/关）@ 25°c: | 40ns/142ns |
| 测试条件: | 400V, 40A, 5Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247 Long Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HGT1S14N36G3VLTRochester Electronics |
N-CHANNEL IGBT |
|
ISL9V5045S3ST-F085Sanyo Semiconductor/ON Semiconductor |
IGBT 480V 51A 300W D2PAK |
|
STGP7NC60HDSTMicroelectronics |
IGBT 600V 25A 80W TO220 |
|
IRG4BC10SD-SPBFRochester Electronics |
IRG4BC10 - DISCRETE IGBT WITH AN |
|
ISL9V2540S3STRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
RGTH50TK65GC11ROHM Semiconductor |
IGBT |
|
IXA37IF1200HJWickmann / Littelfuse |
IGBT 1200V 58A 195W TO247 |
|
AUIRGSL4062D1Rochester Electronics |
IGBT, 59A I(C), 600V V(BR)CES, N |
|
AOTF10B60D2Alpha and Omega Semiconductor, Inc. |
IGBT 600V 10A TO-220F |
|
IXBH10N170Wickmann / Littelfuse |
IGBT 1700V 20A 140W TO247AD |
|
RGT50TM65DGC9ROHM Semiconductor |
FIELD STOP TRENCH IGBT |
|
MGP19N35CLRochester Electronics |
IGBT, 19A, 380V, N-CHANNEL |
|
APT75GP120B2GRoving Networks / Microchip Technology |
IGBT 1200V 100A 1042W TMAX |