English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchStop™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | Trench Field Stop |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 40 A |
| 电流 - 集电极脉冲 (icm): | 60 A |
| vce(on) (max) @ vge, ic: | 2.05V @ 15V, 20A |
| 功率 - 最大值: | 166 W |
| 开关能量: | 310µJ (on), 460µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 120 nC |
| td（开/关）@ 25°c: | 18ns/199ns |
| 测试条件: | 400V, 20A, 12Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | PG-TO247-3-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IKW50N65ET7XKSA1IR (Infineon Technologies) |
IKW50N65ET7XKSA1 |
|
IKW15N120T2FKSA1IR (Infineon Technologies) |
IGBT 1200V 30A 235W TO247-3 |
|
FGH60N60SMDSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 120A TO247 |
|
HGT1S20N60C3S9ASanyo Semiconductor/ON Semiconductor |
IGBT 600V 45A TO263AB |
|
IRG8P25N120KD-EPBFRochester Electronics |
IRG8P25N120 - DISCRETE IGBT WITH |
|
STGB15M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
|
FGA40T65SHDSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 650V 80A TO3PN |
|
APT20GT60BRDQ1GRoving Networks / Microchip Technology |
IGBT 600V 43A 174W TO247 |
|
IXGT32N170Wickmann / Littelfuse |
IGBT 1700V 75A 350W TO268 |
|
IKW30N65EL5XKSA1IR (Infineon Technologies) |
IGBT 650V 30A FAST DIODE TO247-3 |
|
FGA20S125P-SN00336Sanyo Semiconductor/ON Semiconductor |
IGBT 1250V 20A 250W TO-3PN |
|
IKW20N60TARochester Electronics |
IKW20N60 - AUTOMOTIVE IGBT DISCR |
|
IXYX100N120C3Wickmann / Littelfuse |
IGBT 1200V 188A 1150W PLUS247 |
