DISCRETE IGBT WITH DIODE
D38999/21HD18XD
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
igbt型: | - |
电压 - 集电极发射极击穿(最大值): | 1.2 V |
电流 - 集电极 (ic) (max): | 9.6 A |
电流 - 集电极脉冲 (icm): | 9.9 A |
vce(on) (max) @ vge, ic: | 2.8V @ 15V, 3A |
功率 - 最大值: | 62.5 W |
开关能量: | 290µJ |
输入类型: | Standard |
栅极电荷: | 22 nC |
td(开/关)@ 25°c: | 9.2ns/281ns |
测试条件: | 800V, 3A, 82Ohm, 15V |
反向恢复时间 (trr): | 42 ns |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | PG-TO247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IKW50N60TRochester Electronics |
IKW50N60 - DISCRETE IGBT WITH AN |
![]() |
RGT40NL65DGTLROHM Semiconductor |
FIELD STOP TRENCH IGBT |
![]() |
NGTB30N60L2WGSanyo Semiconductor/ON Semiconductor |
IGBT 600V 30A TO247 |
![]() |
IKA08N65H5Rochester Electronics |
IKA08N65 - DISCRETE IGBT WITH AN |
![]() |
IKW03N120HRochester Electronics |
IGBT WITH ANTI-PARALLEL DIODE |
![]() |
STGB19NC60HDT4STMicroelectronics |
IGBT 600V 40A 130W D2PAK |
![]() |
IKB15N65EH5ATMA1IR (Infineon Technologies) |
INDUSTRY 14 |
![]() |
SKB02N60ATMA1Rochester Electronics |
IGBT, 6A, 600V, N-CHANNEL |
![]() |
IGW30N60TFKSA1IR (Infineon Technologies) |
IGBT 600V 60A 187W TO247-3 |
![]() |
IRGP50B60PDPBF-INFRochester Electronics |
AUTOMOTIVE WARP2 IGBT ULTRAFAST |
![]() |
RGTVX6TS65DGC11ROHM Semiconductor |
IGBT |
![]() |
IXYN75N65C3D1Wickmann / Littelfuse |
IGBT |
![]() |
IKP20N60TRochester Electronics |
IKP20N60 - DISCRETE IGBT WITH AN |