English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GenX3™, XPT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 1200 V |
| 电流 - 集电极 (ic) (max): | 64 A |
| 电流 - 集电极脉冲 (icm): | 105 A |
| vce(on) (max) @ vge, ic: | 4V @ 15V, 40A |
| 功率 - 最大值: | 480 W |
| 开关能量: | 3.9mJ (on), 660µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 85 nC |
| td（开/关）@ 25°c: | 24ns/125ns |
| 测试条件: | 600V, 40A, 10Ohm, 15V |
| 反向恢复时间 (trr): | 195 ns |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247 (IXYH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FGA30S120PSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 1300V 60A TO3PN |
|
IKW30N60DTPRochester Electronics |
HIGH SPEED IGBT |
|
IRGS8B60KPBFRochester Electronics |
IGBT, 11A, 600V, N-CHANNEL |
|
IRGS6B60KDTRLPRochester Electronics |
IGBT 11A, 600V, N CHANNEL |
|
SKB02N60E3266ATMA1Rochester Electronics |
IGBT 6A, 600V, N CHANNEL |
|
FGH75T65SQDTL4Sanyo Semiconductor/ON Semiconductor |
650V FS4 TRENCH IGBT |
|
IKB06N60TATMA1IR (Infineon Technologies) |
IGBT 600V 12A 88W TO263-3 |
|
STGWA15M120DF3STMicroelectronics |
IGBT 1200V 30A 259W |
|
IRG7PH50UPBFRochester Electronics |
IGBT, 140A I(C), 1200V V(BR)CES, |
|
FGD3440G2-F085Sanyo Semiconductor/ON Semiconductor |
IGBT 400V 26.9A TO252AA |
|
IXXX160N65B4Wickmann / Littelfuse |
IGBT 650V 310A 940W PLUS247 |
|
APT150GN60LDQ4GRoving Networks / Microchip Technology |
IGBT 600V 220A 536W TO-264L |
|
IGP10N60TXKSA1Rochester Electronics |
IGP10N60 - DISCRETE IGBT WITHOUT |
