类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
电压 - 击穿 (v(br)gss): | 35 V |
漏源电压 (vdss): | 30 V |
电流 - 漏极 (idss) @ vds (vgs=0): | 25 mA @ 20 V |
电流消耗 (id) - 最大值: | - |
电压 - 截止 (vgs off) @ id: | - |
输入电容 (ciss) (max) @ vds: | 10pF @ 12V (VGS) |
电阻 - rds(on): | 60 Ohms |
功率 - 最大值: | 310 mW |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMMBFJ177LT1Rochester Electronics |
TRANS JFET P-CH SOT23 |
|
J175-D26ZSanyo Semiconductor/ON Semiconductor |
JFET P-CH 30V 0.35W TO92-3 |
|
J112GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
J112-D27ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 35V 625MW TO92-3 |
|
174DFN 8LLinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE, JFET SWITCH |
|
MMBFJ175LT1GSanyo Semiconductor/ON Semiconductor |
JFET P-CH 30V 0.225W SOT23-3 |
|
J112,126Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NTE456NTE Electronics, Inc. |
JFET-N-CH GEN AMP/SW |
|
4392DFN 8LLinear Integrated Systems, Inc. |
LOW NOISE, N-CHANNEL JFET SWITCH |
|
LSK389A SOIC 8LLinear Integrated Systems, Inc. |
LOW NOISE, MONOLITHIC DUAL, N-CH |
|
MCH5908G-TL-ERochester Electronics |
SMALL SIGNAL FET |
|
J111-D74ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 35V 625MW TO92-3 |
|
MMBFJ177Rochester Electronics |
P-CHANNEL JFET, TO-236AB |