English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 电压 - 击穿 (v(br)gss): | 35 V |
| 漏源电压 (vdss): | - |
| 电流 - 漏极 (idss) @ vds (vgs=0): | 2 mA @ 15 V |
| 电流消耗 (id) - 最大值: | - |
| 电压 - 截止 (vgs off) @ id: | 500 mV @ 1 µA |
| 输入电容 (ciss) (max) @ vds: | - |
| 电阻 - rds(on): | 100 Ohms |
| 功率 - 最大值: | 350 mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
| 供应商设备包: | SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMBFJ177LT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
J111RL1GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
MMBF4392Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
2N4858ACentral Semiconductor |
JFET N-CH 40V 0.36W TO-18 |
|
TF414T5GSanyo Semiconductor/ON Semiconductor |
JFET N-CH 40V SOT883 |
|
PMBFJ112,215Rochester Electronics |
PMBFJ112 - N-CHANNEL FET |
|
J175Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
2SK879-GR(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
JFET N-CH 0.1W USM |
|
NSVJ6904DSB6T1GSanyo Semiconductor/ON Semiconductor |
JFET -25V, 20 TO 40MA DUA |
|
NTE2937NTE Electronics, Inc. |
JFET P-CHANNEL 30V TO-92 |
|
TIS74Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
2SK880-Y(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
JFET N-CH 50V 0.1W USM |
|
2N4392 PBFREECentral Semiconductor |
JFET N-CH 40V 1.8W TO-18 |
