类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
场效应管类型: | N-Channel |
电压 - 击穿 (v(br)gss): | 25 V |
漏源电压 (vdss): | 25 V |
电流 - 漏极 (idss) @ vds (vgs=0): | 500 µA @ 15 V |
电流消耗 (id) - 最大值: | - |
电压 - 截止 (vgs off) @ id: | 6.5 V @ 1 nA |
输入电容 (ciss) (max) @ vds: | - |
电阻 - rds(on): | - |
功率 - 最大值: | 300 mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-106-3 Domed |
供应商设备包: | TO-106 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMBF4117Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 40V 0.225W SOT23 |
|
MMBF4392LT1GSanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V 0.225W SOT23-3 |
|
MMBF5103Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 40V 0.35W SOT-23 |
|
J105Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
MMBF4393LT1GSanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V 0.225W SOT23-3 |
|
MCH5908H-TL-ESanyo Semiconductor/ON Semiconductor |
JFET 2N-CH 0.3W MCPH5 |
|
BFR30LT1GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
J112RLRAGRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TF412ST5GRochester Electronics |
N-CHANNEL JFET, 30 V, 1.2 TO 3.0 |
|
LSK389C TO-71 6LLinear Integrated Systems, Inc. |
LOW NOISE, MONOLITHIC DUAL, N-CH |
|
TF202THC-4-TL-HRochester Electronics |
SMALL SIGNAL N-CHANNEL JFET |
|
2SK596S-CRochester Electronics |
SMALL SIGNAL FET |
|
TF208TH-4-TL-HRochester Electronics |
JFET N-CH 1MA 100MW VTFP |